1. Shodhganga@INFLIBNET
  2. Panjab University
  3. University Institute of Engineering and Technology
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/92398
Title: Modeling of quantum mechanical effects in nanometer scale MOSFETs
Researcher: Chaudhry, Amit
Guide(s): Roy, J N
Keywords: Quantum
Classical
Nanometer
Modelling
Tunneling
University: Panjab University
Completed Date: 31/12/2008
Abstract: Abstract available
Pagination: xxv, 189p.
URI: http://hdl.handle.net/10603/92398
Appears in Departments:University Institute of Engineering and Technology

Files in This Item:
File Description SizeFormat 
01_title page.pdfAttached File34.42 kBAdobe PDFView/Open
02_dedication.pdf15.19 kBAdobe PDFView/Open
03_acknowledgement.pdf152.85 kBAdobe PDFView/Open
04_symbols and selected values.pdf144.11 kBAdobe PDFView/Open
05_abbreviation.pdf43.47 kBAdobe PDFView/Open
06_list of table and figures.pdf520.62 kBAdobe PDFView/Open
07_abstract.pdf378.04 kBAdobe PDFView/Open
08_content.pdf260.29 kBAdobe PDFView/Open
09_chapter 1.pdf1.29 MBAdobe PDFView/Open
10_chapter 2.pdf1.91 MBAdobe PDFView/Open
11_chapter 3.pdf1.73 MBAdobe PDFView/Open
12_chapter 4.pdf1.38 MBAdobe PDFView/Open
13_chapter 5.pdf844.21 kBAdobe PDFView/Open
14_summary major conclusions and policy recommendations.pdf765.28 kBAdobe PDFView/Open
15_appendix 1.pdf121.97 kBAdobe PDFView/Open
16_appendix 2.pdf53.97 kBAdobe PDFView/Open
17_appendix 3.pdf2.93 MBAdobe PDFView/Open
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