Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/91949
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DC FieldValueLanguage
dc.coverage.spatialElectronics
dc.date.accessioned2016-05-24T10:47:35Z-
dc.date.available2016-05-24T10:47:35Z-
dc.identifier.urihttp://hdl.handle.net/10603/91949-
dc.description.abstractAbstract available newline newline
dc.format.extentxii, 111p.
dc.languageEnglish
dc.relation-
dc.rightsuniversity
dc.titleStudy of electrical and structural properties of metal contacts on gallium nitride
dc.title.alternative-
dc.creator.researcherRamesha Reddy, N
dc.subject.keywordGaN material system, Metal-semiconductor, Schottky-Mott model, Electron beam, Rapid thermal annealing
dc.description.note-
dc.contributor.guideRajagopal Reddy, V
dc.publisher.placeMysore
dc.publisher.universityUniversity of Mysore
dc.publisher.institutionDepartment of Electronics
dc.date.registeredn.d.
dc.date.completed2007
dc.date.awardedn.d.
dc.format.dimensions-
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics

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01_title.pdfAttached File271.72 kBAdobe PDFView/Open
02_certificate.pdf297.54 kBAdobe PDFView/Open
03_declaration.pdf213.94 kBAdobe PDFView/Open
04_acknowledgement.pdf58.31 kBAdobe PDFView/Open
05_abstract.pdf123.34 kBAdobe PDFView/Open
06_content.pdf91.91 kBAdobe PDFView/Open
07_list of tables.pdf35.89 kBAdobe PDFView/Open
08_list of figures.pdf153.35 kBAdobe PDFView/Open
09_chapter 1.pdf2.73 MBAdobe PDFView/Open
10_chapter 2.pdf1.86 MBAdobe PDFView/Open
11_chapter 3.pdf3.26 MBAdobe PDFView/Open
12_chapter 4.pdf2.15 MBAdobe PDFView/Open
13_chapter 5.pdf284.53 kBAdobe PDFView/Open
14_published paper.pdf2.25 MBAdobe PDFView/Open


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