Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/91949
Title: Study of electrical and structural properties of metal contacts on gallium nitride
Researcher: Ramesha Reddy, N
Guide(s): Rajagopal Reddy, V
Keywords: GaN material system, Metal-semiconductor, Schottky-Mott model, Electron beam, Rapid thermal annealing
University: University of Mysore
Completed Date: 2007
Abstract: Abstract available newline newline
Pagination: xii, 111p.
URI: http://hdl.handle.net/10603/91949
Appears in Departments:Department of Electronics

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01_title.pdfAttached File271.72 kBAdobe PDFView/Open
02_certificate.pdf297.54 kBAdobe PDFView/Open
03_declaration.pdf213.94 kBAdobe PDFView/Open
04_acknowledgement.pdf58.31 kBAdobe PDFView/Open
05_abstract.pdf123.34 kBAdobe PDFView/Open
06_content.pdf91.91 kBAdobe PDFView/Open
07_list of tables.pdf35.89 kBAdobe PDFView/Open
08_list of figures.pdf153.35 kBAdobe PDFView/Open
09_chapter 1.pdf2.73 MBAdobe PDFView/Open
10_chapter 2.pdf1.86 MBAdobe PDFView/Open
11_chapter 3.pdf3.26 MBAdobe PDFView/Open
12_chapter 4.pdf2.15 MBAdobe PDFView/Open
13_chapter 5.pdf284.53 kBAdobe PDFView/Open
14_published paper.pdf2.25 MBAdobe PDFView/Open
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