Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/91949
Title: | Study of electrical and structural properties of metal contacts on gallium nitride |
Researcher: | Ramesha Reddy, N |
Guide(s): | Rajagopal Reddy, V |
Keywords: | GaN material system, Metal-semiconductor, Schottky-Mott model, Electron beam, Rapid thermal annealing |
University: | University of Mysore |
Completed Date: | 2007 |
Abstract: | Abstract available newline newline |
Pagination: | xii, 111p. |
URI: | http://hdl.handle.net/10603/91949 |
Appears in Departments: | Department of Electronics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 271.72 kB | Adobe PDF | View/Open |
02_certificate.pdf | 297.54 kB | Adobe PDF | View/Open | |
03_declaration.pdf | 213.94 kB | Adobe PDF | View/Open | |
04_acknowledgement.pdf | 58.31 kB | Adobe PDF | View/Open | |
05_abstract.pdf | 123.34 kB | Adobe PDF | View/Open | |
06_content.pdf | 91.91 kB | Adobe PDF | View/Open | |
07_list of tables.pdf | 35.89 kB | Adobe PDF | View/Open | |
08_list of figures.pdf | 153.35 kB | Adobe PDF | View/Open | |
09_chapter 1.pdf | 2.73 MB | Adobe PDF | View/Open | |
10_chapter 2.pdf | 1.86 MB | Adobe PDF | View/Open | |
11_chapter 3.pdf | 3.26 MB | Adobe PDF | View/Open | |
12_chapter 4.pdf | 2.15 MB | Adobe PDF | View/Open | |
13_chapter 5.pdf | 284.53 kB | Adobe PDF | View/Open | |
14_published paper.pdf | 2.25 MB | Adobe PDF | View/Open |
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