1. Shodhganga@INFLIBNET
  2. Sardar Patel University
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/75859
Title: Studies on growth and etch patterns of silicon carbide
Researcher: Mathai, K John
Guide(s): Patel, A R
Keywords: Carbide
Etch
Interferometry
Polytypism
Silicon
University: Sardar Patel University
Completed Date: 30/04/1970
Abstract: Abstract not available
Pagination: xiv, 107p.
URI: http://hdl.handle.net/10603/75859
Appears in Departments:Department of Physics

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01_title page.pdfAttached File16.35 kBAdobe PDFView/Open
02_synopsis.pdf216.71 kBAdobe PDFView/Open
03_acknowledgement.pdf32.14 kBAdobe PDFView/Open
04_content.pdf158.68 kBAdobe PDFView/Open
05_chapter 1.pdf2.5 MBAdobe PDFView/Open
06_chapter 2.pdf351.55 kBAdobe PDFView/Open
07_chapter 3.pdf397.66 kBAdobe PDFView/Open
08_chapter 4.pdf305.04 kBAdobe PDFView/Open
09_chapter 5.pdf5.33 MBAdobe PDFView/Open
10_chapter 6.pdf2.91 MBAdobe PDFView/Open
11_chapter 7.pdf350.48 kBAdobe PDFView/Open
12_chapter 8.pdf119.69 kBAdobe PDFView/Open
13_chapter 9.pdf177.86 kBAdobe PDFView/Open
14_chapter 10.pdf192.94 kBAdobe PDFView/Open
15_chapter 11.pdf3.15 MBAdobe PDFView/Open
16_chapter 12.pdf119.93 kBAdobe PDFView/Open
17_chapter 13.pdf4.47 MBAdobe PDFView/Open
18_references.pdf406.5 kBAdobe PDFView/Open
19_captions of the figures.pdf290.6 kBAdobe PDFView/Open
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