Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/604634
Title: | Development of high voltage gallium oxide field effect transistor |
Researcher: | Pharyanshu Kachhawa |
Guide(s): | Nidhi Chaturvedi |
Keywords: | Engineering Engineering and Technology Engineering Multidisciplinary |
University: | Academy of Scientific and Innovative Research (AcSIR) |
Completed Date: | 2024 |
Abstract: | newline |
Pagination: | All |
URI: | http://hdl.handle.net/10603/604634 |
Appears in Departments: | Engineering Sciences (CSIR-CEERI) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
80_recommendation.pdf | Attached File | 64.45 kB | Adobe PDF | View/Open |
abstract.pdf | 17.89 kB | Adobe PDF | View/Open | |
annexures.pdf | 2.91 MB | Adobe PDF | View/Open | |
chapter 1.pdf | 128.94 kB | Adobe PDF | View/Open | |
chapter 2.pdf | 810.99 kB | Adobe PDF | View/Open | |
chapter 3.pdf | 1.94 MB | Adobe PDF | View/Open | |
chapter 4.pdf | 3.47 MB | Adobe PDF | View/Open | |
chapter 5.pdf | 36.26 kB | Adobe PDF | View/Open | |
content.pdf | 33.78 kB | Adobe PDF | View/Open | |
prelim pages.pdf | 390.24 kB | Adobe PDF | View/Open | |
title.pdf | 28.79 kB | Adobe PDF | View/Open |
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