Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/604634
Title: Development of high voltage gallium oxide field effect transistor
Researcher: Pharyanshu Kachhawa
Guide(s): Nidhi Chaturvedi
Keywords: Engineering
Engineering and Technology
Engineering Multidisciplinary
University: Academy of Scientific and Innovative Research (AcSIR)
Completed Date: 2024
Abstract: newline
Pagination: All
URI: http://hdl.handle.net/10603/604634
Appears in Departments:Engineering Sciences (CSIR-CEERI)

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80_recommendation.pdfAttached File64.45 kBAdobe PDFView/Open
abstract.pdf17.89 kBAdobe PDFView/Open
annexures.pdf2.91 MBAdobe PDFView/Open
chapter 1.pdf128.94 kBAdobe PDFView/Open
chapter 2.pdf810.99 kBAdobe PDFView/Open
chapter 3.pdf1.94 MBAdobe PDFView/Open
chapter 4.pdf3.47 MBAdobe PDFView/Open
chapter 5.pdf36.26 kBAdobe PDFView/Open
content.pdf33.78 kBAdobe PDFView/Open
prelim pages.pdf390.24 kBAdobe PDFView/Open
title.pdf28.79 kBAdobe PDFView/Open
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