1. Shodhganga@INFLIBNET
  2. University of Delhi
  3. Dept. of Physics and Astrophysics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/602957
Title: Ion Implantation Induced Modifications in the Structural Morphological and Electrical Characteristics of GaSb Films Grown by Molecular Beam Epitaxy
Researcher: Pandey, Rakesh Kumar
Guide(s): Rath, Shyama
Keywords: Astronomy and Astrophysics space science
GaSb, Epitaxial growth, MBE
Physical Sciences
Space Sciences
University: University of Delhi
Completed Date: 2022
Abstract: Available
Pagination: 140p.
URI: http://hdl.handle.net/10603/602957
Appears in Departments:Dept. of Physics and Astrophysics

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01_title.pdfAttached File39.19 kBAdobe PDFView/Open
02_prelim pages.pdf2.18 MBAdobe PDFView/Open
03_content.pdf246.93 kBAdobe PDFView/Open
04_abstract.pdf83.16 kBAdobe PDFView/Open
05_chapter 1.pdf777.74 kBAdobe PDFView/Open
06_chapter 2.pdf1.08 MBAdobe PDFView/Open
07_chapter 3.pdf988.2 kBAdobe PDFView/Open
08_chapter 4.pdf1.52 MBAdobe PDFView/Open
09_chapter 5.pdf1.42 MBAdobe PDFView/Open
10_chapter 6.pdf1.28 MBAdobe PDFView/Open
11_chapter 7.pdf171.46 kBAdobe PDFView/Open
12_annexures.pdf129.67 kBAdobe PDFView/Open
80_recommendation.pdf209.6 kBAdobe PDFView/Open
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