Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/602957
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dc.coverage.spatial
dc.date.accessioned2024-11-26T08:32:15Z-
dc.date.available2024-11-26T08:32:15Z-
dc.identifier.urihttp://hdl.handle.net/10603/602957-
dc.description.abstractAvailable
dc.format.extent140p.
dc.languageEnglish
dc.relationBibliography p. 129-140
dc.rightsuniversity
dc.titleIon Implantation Induced Modifications in the Structural Morphological and Electrical Characteristics of GaSb Films Grown by Molecular Beam Epitaxy
dc.title.alternative
dc.creator.researcherPandey, Rakesh Kumar
dc.subject.keywordAstronomy and Astrophysics space science
dc.subject.keywordGaSb, Epitaxial growth, MBE
dc.subject.keywordPhysical Sciences
dc.subject.keywordSpace Sciences
dc.description.note
dc.contributor.guideRath, Shyama
dc.publisher.placeNew Delhi
dc.publisher.universityUniversity of Delhi
dc.publisher.institutionDept. of Physics and Astrophysics
dc.date.registered
dc.date.completed2022
dc.date.awarded2022
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Dept. of Physics and Astrophysics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File39.19 kBAdobe PDFView/Open
02_prelim pages.pdf2.18 MBAdobe PDFView/Open
03_content.pdf246.93 kBAdobe PDFView/Open
04_abstract.pdf83.16 kBAdobe PDFView/Open
05_chapter 1.pdf777.74 kBAdobe PDFView/Open
06_chapter 2.pdf1.08 MBAdobe PDFView/Open
07_chapter 3.pdf988.2 kBAdobe PDFView/Open
08_chapter 4.pdf1.52 MBAdobe PDFView/Open
09_chapter 5.pdf1.42 MBAdobe PDFView/Open
10_chapter 6.pdf1.28 MBAdobe PDFView/Open
11_chapter 7.pdf171.46 kBAdobe PDFView/Open
12_annexures.pdf129.67 kBAdobe PDFView/Open
80_recommendation.pdf209.6 kBAdobe PDFView/Open


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