Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/594544
Title: Ion irradiation induced defect production recovery and blistering mechanism in 3C SiC
Researcher: N. SREELAKSHMI
Guide(s): amrithapandian
Keywords: Defects
Electronic energy loss
ion channeling
Ion irradiation
Ionization induced annealing
Physical Sciences
Physics
Physics Atomic Molecular and Chemical
University: Homi Bhabha National Institute
Completed Date: 2024
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/594544
Appears in Departments:Department of Physical Sciences

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File983.99 kBAdobe PDFView/Open
02_prelim_pages.pdf1.81 MBAdobe PDFView/Open
03_content.pdf953.77 kBAdobe PDFView/Open
04_abstract.pdf2.03 MBAdobe PDFView/Open
05_chapter_1.pdf4.99 MBAdobe PDFView/Open
06_chapter_2.pdf4.95 MBAdobe PDFView/Open
07_chapter_3.pdf4.06 MBAdobe PDFView/Open
08_chapter_4.pdf6.13 MBAdobe PDFView/Open
09_chapter_5.pdf2.79 MBAdobe PDFView/Open
10_annexures.pdf2.27 MBAdobe PDFView/Open
11_chapter_6.pdf3 MBAdobe PDFView/Open
12_chapter_7.pdf2.03 MBAdobe PDFView/Open
18_certificate.pdf945.4 kBAdobe PDFView/Open
19_list_of_graph_and_table.pdf103.46 kBAdobe PDFView/Open
80_recommendation.pdf983.99 kBAdobe PDFView/Open
Show full item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: