1. Shodhganga@INFLIBNET
  2. Sathyabama Institute of Science and Technology
  3. ELECTRONICS DEPARTMENT
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/594474
Title: Design of High Speed Memory architecture Based on Spin Orbit Torque Magnetic Tunnel Junction
Researcher: MUTHAPPA K A
Guide(s): SAHAYA ANSELIN NISHA A
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Sathyabama Institute of Science and Technology
Completed Date: 2023
Pagination: vi, 150
URI: http://hdl.handle.net/10603/594474
Appears in Departments:ELECTRONICS DEPARTMENT

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File318.51 kBAdobe PDFView/Open
02_prelim pages.pdf2.33 MBAdobe PDFView/Open
03_content.pdf201.36 kBAdobe PDFView/Open
04_abstract.pdf125.32 kBAdobe PDFView/Open
05_chapter 1.pdf748.83 kBAdobe PDFView/Open
06_chapter 2.pdf518.23 kBAdobe PDFView/Open
07_chapter 3.pdf1.91 MBAdobe PDFView/Open
08_chapter 4.pdf1.41 MBAdobe PDFView/Open
09_chapter 5.pdf1.15 MBAdobe PDFView/Open
10_chapter 6.pdf121.29 kBAdobe PDFView/Open
11_annexures.pdf2.2 MBAdobe PDFView/Open
80_recommendation.pdf318.51 kBAdobe PDFView/Open
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