Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/5860
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dc.coverage.spatialInstrumentationen_US
dc.date.accessioned2012-12-24T11:30:18Z-
dc.date.available2012-12-24T11:30:18Z-
dc.date.issued2012-12-24-
dc.identifier.urihttp://hdl.handle.net/10603/5860-
dc.description.abstractNoneen_US
dc.format.extent202p.en_US
dc.languageEnglishen_US
dc.relation--en_US
dc.rightsuniversityen_US
dc.titlePreparation and characterization of High k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric applicationsen_US
dc.title.alternativeen_US
dc.creator.researcherPhilip, Anuen_US
dc.subject.keywordInstrumentationen_US
dc.subject.keywordHigh-k Aluminum Oxideen_US
dc.subject.keywordAtomic Layeren_US
dc.subject.keywordGate Dielectric applicationsen_US
dc.description.noteSummary and Appendix p. 196-202, References included in chaptersen_US
dc.contributor.guideRajeev Kumar Ken_US
dc.publisher.placeCochinen_US
dc.publisher.universityCochin University of Science and Technologyen_US
dc.publisher.institutionDepartment of Instrumentationen_US
dc.date.registeredn.d.en_US
dc.date.completedDecember, 2011en_US
dc.date.awarded2012en_US
dc.format.dimensions--en_US
dc.format.accompanyingmaterialNoneen_US
dc.type.degreePh.D.en_US
dc.source.inflibnetINFLIBNETen_US
Appears in Departments:Department of Instrumentation

Files in This Item:
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01_title.pdfAttached File226.1 kBAdobe PDFView/Open
02_certificate.pdf137.55 kBAdobe PDFView/Open
03_declaration.pdf105.04 kBAdobe PDFView/Open
04_acknowledgement.pdf208.19 kBAdobe PDFView/Open
05_contents.pdf146.92 kBAdobe PDFView/Open
06_preface.pdf208.4 kBAdobe PDFView/Open
07_chapter 1.pdf937.18 kBAdobe PDFView/Open
08_chapter 2.pdf771.29 kBAdobe PDFView/Open
09_chapter 3.pdf1.22 MBAdobe PDFView/Open
10_chapter 4.pdf685.02 kBAdobe PDFView/Open
11_chapter 5.pdf857 kBAdobe PDFView/Open
12_chapter 6.pdf1.32 MBAdobe PDFView/Open
13_chapter 7.pdf2.8 MBAdobe PDFView/Open
14_chapter 8.pdf302.74 kBAdobe PDFView/Open


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