1. Shodhganga@INFLIBNET
  2. Bharathiar University
  3. Department of Electronics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/583750
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2024-08-19T12:07:04Z-
dc.date.available2024-08-19T12:07:04Z-
dc.identifier.urihttp://hdl.handle.net/10603/583750-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titlePreparation And Characterization Of Pure And Doped Mos2 Thin Films For P N Junction Diode Application By Jet Nebulizer Spray Pyrolysis Technique
dc.title.alternative
dc.creator.researcherSasikala T
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordOptics
dc.description.note
dc.contributor.guideShanmugasundram K
dc.publisher.placeCoimbatore
dc.publisher.universityBharathiar University
dc.publisher.institutionDepartment of Electronics
dc.date.registered2016
dc.date.completed2022
dc.date.awarded2022
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File82.84 kBAdobe PDFView/Open
02_prelim pages.pdf529.54 kBAdobe PDFView/Open
03_content.pdf79.29 kBAdobe PDFView/Open
05_chapter 1.pdf4.31 MBAdobe PDFView/Open
06_chapter 2.pdf2.64 MBAdobe PDFView/Open
07_chapter 3.pdf3.02 MBAdobe PDFView/Open
08_chapter 4.pdf2.59 MBAdobe PDFView/Open
09_chapter 5.pdf3.08 MBAdobe PDFView/Open
10_chapter 6.pdf176.24 kBAdobe PDFView/Open
17_annexures.pdf175.15 kBAdobe PDFView/Open
80_recommendation.pdf209.05 kBAdobe PDFView/Open
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