Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/583013
| Title: | Design and Analysis of A1GaN Gan Based High Electron Mobility Transistor HEMT on Silicon Substrate for High Power RF Applications |
| Researcher: | Raj Kumar J S |
| Guide(s): | Nirmal D |
| Keywords: | Engineering and Technology |
| University: | Karunya University |
| Completed Date: | 2023 |
| Abstract: | newline |
| Pagination: | 123 pages |
| URI: | http://hdl.handle.net/10603/583013 |
| Appears in Departments: | Department of Electronics and Communication Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01.title.pdf | Attached File | 274.38 kB | Adobe PDF | View/Open |
| 02.prelim pages.pdf | 413.85 kB | Adobe PDF | View/Open | |
| 03.content.pdf | 102.74 kB | Adobe PDF | View/Open | |
| 04.abstract.pdf | 11.18 kB | Adobe PDF | View/Open | |
| 05.chapter 1.pdf | 998.94 kB | Adobe PDF | View/Open | |
| 06.chapter 2.pdf | 783.25 kB | Adobe PDF | View/Open | |
| 07.chapter 3.pdf | 842.49 kB | Adobe PDF | View/Open | |
| 08.chapter 4.pdf | 1.05 MB | Adobe PDF | View/Open | |
| 09.chapter 5.pdf | 736.31 kB | Adobe PDF | View/Open | |
| 10.chapter 6.pdf | 433.16 kB | Adobe PDF | View/Open | |
| 11.annexures.pdf | 525 kB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 368.6 kB | Adobe PDF | View/Open |
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