1. Shodhganga@INFLIBNET
  2. Sikkim Manipal University
  3. Department of Electronics & Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/572360
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2024-06-19T12:42:04Z-
dc.date.available2024-06-19T12:42:04Z-
dc.identifier.urihttp://hdl.handle.net/10603/572360-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleModeling of Gate All Around Mosfet for Reduction of Short Channel effect
dc.title.alternative
dc.creator.researcherAgarwal, Amit
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.note
dc.contributor.guidePradhan, Prashanta Chandra and Swain Prasad, Bibhu
dc.publisher.placeGangtok
dc.publisher.universitySikkim Manipal University
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.date.registered2016
dc.date.completed2024
dc.date.awarded2024
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics & Communication Engineering

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01_title.pdfAttached File124.68 kBAdobe PDFView/Open
02_certificate.pdf329.34 kBAdobe PDFView/Open
03_abstract.pdf517.32 kBAdobe PDFView/Open
07_content.pdf348.28 kBAdobe PDFView/Open
12_chapter1.pdf1.09 MBAdobe PDFView/Open
13_chapter2.pdf562.95 kBAdobe PDFView/Open
14_chapter3.pdf1.44 MBAdobe PDFView/Open
15_chapter4.pdf1.18 MBAdobe PDFView/Open
16_chapter5.pdf1.08 MBAdobe PDFView/Open
80_recommendation.pdf707 kBAdobe PDFView/Open
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