Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/572360
Title: Modeling of Gate All Around Mosfet for Reduction of Short Channel effect
Researcher: Agarwal, Amit
Guide(s): Pradhan, Prashanta Chandra and Swain Prasad, Bibhu
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Sikkim Manipal University
Completed Date: 2024
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/572360
Appears in Departments:Department of Electronics & Communication Engineering

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02_certificate.pdf329.34 kBAdobe PDFView/Open
03_abstract.pdf517.32 kBAdobe PDFView/Open
07_content.pdf348.28 kBAdobe PDFView/Open
12_chapter1.pdf1.09 MBAdobe PDFView/Open
13_chapter2.pdf562.95 kBAdobe PDFView/Open
14_chapter3.pdf1.44 MBAdobe PDFView/Open
15_chapter4.pdf1.18 MBAdobe PDFView/Open
16_chapter5.pdf1.08 MBAdobe PDFView/Open
80_recommendation.pdf707 kBAdobe PDFView/Open
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