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http://hdl.handle.net/10603/572003
Title: | To study the effect of dopant concentration and calcined temperature on electric and magnetic properties of SnO2 based nanocomposites |
Researcher: | Rathi, Parveen |
Guide(s): | Kumar, Manoj |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | OM Sterling Global University |
Completed Date: | 2023 |
Abstract: | newline The electronic goods of bulk metal oxides change when they are reduced to nanoscale due to their quantum confinement and size effect. Metal oxide nanostructures are of great technological importance for the extensive bandgap materials due to their shape and shape induced properties. A variety of pure, doped metal oxide nanostructures have been explored for their structural, electrical, optical, and magnetic properties for many applications. Among them, SnO 2 , an N-type semiconductor metal oxide with a wide bandgap of E g = 3.6 eV has attracted a lot of attention and has been used in a wide range of applications such as gas sensors, rechargeable batteries, optoelectronic devices, and supercapacitors. In addition, the low cost and sociability of the environment pays them more attention than other metal oxides. It is clear that the crystal size, crystalline defects, structural morphology, and surface chemistry depend on the doping ratio, process, and preparation conditions. Considering the potential importance, the microwave assisted chemical co-precipitation method is used to synthesize SnO 2 nanostructures of different structures and doped SnO 2 nanostructures. The properties of the prepared nanostructures are investigated in detail and briefly explained for a better understanding of the new properties compared to the bulk SnO 2 . A surfactant-free method adapted to synthesize SnO 2 nanostructures of different structures. Structural studies substantiate the nanostructures prepared to conform to the tetragonal system with the absence of impurities. Microscopic evaluation shows that the nanostructures have a particle, sphere, and cubic morphology with a size of ~10 nm, ~14 nm and ~16 nm, respectively |
Pagination: | xxii, 288 p. |
URI: | http://hdl.handle.net/10603/572003 |
Appears in Departments: | Electronics Engineering |
Files in This Item:
File | Description | Size | Format | |
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01_title.pdf | Attached File | 157.86 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 1.45 MB | Adobe PDF | View/Open | |
03_content.pdf | 233.1 kB | Adobe PDF | View/Open | |
04_ abstract.pdf | 42.39 kB | Adobe PDF | View/Open | |
05_chapter 1.pdf | 1.11 MB | Adobe PDF | View/Open | |
06_chapter 2.pdf | 506.26 kB | Adobe PDF | View/Open | |
07_chapter 3.pdf | 442.23 kB | Adobe PDF | View/Open | |
08_chapter 4.pdf | 1.73 MB | Adobe PDF | View/Open | |
09_chapter 5.pdf | 1.59 MB | Adobe PDF | View/Open | |
10_ annexures.pdf | 452.52 kB | Adobe PDF | View/Open | |
11_chapter 6.pdf | 1.3 MB | Adobe PDF | View/Open | |
12_chapter 7.pdf | 1.75 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 171.56 kB | Adobe PDF | View/Open |
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