Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/569171
Title: | Design of SRAM Cell Using Novel Structure Organic Thin Film Transistor |
Researcher: | Gupta, Sakshi |
Guide(s): | Juneja, Pradeep K and Mittal Poornima |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | Graphic Era University |
Completed Date: | 2024 |
Abstract: | In the yester years, there have been determined and impactful attempts to create electronic circuits made using organic materials. Organic electronics undoubtedly offers a plethora of important and advanced applications, including flexible integrated circuits, flat, curved, foldable panel displays, sensors, radio frequency identification (RFID) tags, e-paper, static random-access memory (SRAM), printable fabric and many more. It is anticipated that it may be feasible to manufacture disposable organic integrated circuits using a deposition method that is comparable to printing on paper. Utilizing organic materials allows to produce thin film transistors (TFTs) over a vast area at a reduced cost, thanks to the ease of processing at significantly lower temperatures compared to inorganic materials. Researchers have made it viable to recognize organic materials-based memory devices as a rapidly growing field of research. newlineIn recent years, there have been remarkable developments in the field of organic thin film transistor (OTFT) research. Nevertheless, there are still numerous obstacles that need to be addressed in the domains of device physics, structure, material, and circuit design. Comprehending the influential role that materials used and the geometry of the device play in deciding the yield of the organic circuitry remains a significant issue. newlineThis thesis presents a model that first compares a device with the gate electrode placed at the top of the OSC layer versus one with gate at the bottom of the dielectric layer. It is found that the devices with structure having gate above the pentacene layer performs poorly as compared to the counterpart. Nonetheless, devices with metal contacts on and above the dielectric layer show better result because of less challenges posed pertaining to the flexibility. Furthermore, the thesis elaborates on a dual gate structured device showing incomparable performance as compared to the devices using single gate. |
Pagination: | |
URI: | http://hdl.handle.net/10603/569171 |
Appears in Departments: | Deptt. of Electronics and communication Engineering |
Files in This Item:
File | Description | Size | Format | |
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01_title.pdf | Attached File | 93.02 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 890.17 kB | Adobe PDF | View/Open | |
03_content.pdf | 184.1 kB | Adobe PDF | View/Open | |
04_abstract.pdf | 115.65 kB | Adobe PDF | View/Open | |
05_chapter 1.pdf | 189.77 kB | Adobe PDF | View/Open | |
06_chapter 2.pdf | 1.41 MB | Adobe PDF | View/Open | |
07_chapter 3.pdf | 1.15 MB | Adobe PDF | View/Open | |
08_chapter 4.pdf | 1.56 MB | Adobe PDF | View/Open | |
09_chapter 5.pdf | 749.14 kB | Adobe PDF | View/Open | |
10_chapter 6.pdf | 877.22 kB | Adobe PDF | View/Open | |
11_chapter 7.pdf | 712.22 kB | Adobe PDF | View/Open | |
12_chapter 8.pdf | 151.6 kB | Adobe PDF | View/Open | |
13_annexures.pdf | 477.69 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 233.51 kB | Adobe PDF | View/Open |
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