Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/552583
Title: | Studies of physical properties of silicon implanted with ion dose of oxygen ions |
Researcher: | Dylenski, Jenzy |
Guide(s): | Joshi, M C |
Keywords: | Electron Microscoope Implantation Microscopy Oxygen ions Physical Sciences Physics Physics Atomic Molecular and Chemical Silicon |
University: | University of Mumbai |
Completed Date: | 1975 |
Abstract: | newline No |
Pagination: | x, 277p |
URI: | http://hdl.handle.net/10603/552583 |
Appears in Departments: | Department of Physics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 90.13 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 438.2 kB | Adobe PDF | View/Open | |
03_contents.pdf | 248.99 kB | Adobe PDF | View/Open | |
04_chapter 1.pdf | 1.89 MB | Adobe PDF | View/Open | |
05_chapter 2.pdf | 1.34 MB | Adobe PDF | View/Open | |
06_chapter 3.pdf | 2.38 MB | Adobe PDF | View/Open | |
07_chapter 4.pdf | 1.77 MB | Adobe PDF | View/Open | |
08_chapter 5.pdf | 656.1 kB | Adobe PDF | View/Open | |
09_chapter 6.pdf | 5.22 MB | Adobe PDF | View/Open | |
10_chapter 7.pdf | 569.31 kB | Adobe PDF | View/Open | |
11_annexures.pdf | 102.3 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 657.53 kB | Adobe PDF | View/Open |
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