Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/552583
Title: Studies of physical properties of silicon implanted with ion dose of oxygen ions
Researcher: Dylenski, Jenzy
Guide(s): Joshi, M C
Keywords: Electron Microscoope
Implantation
Microscopy
Oxygen ions
Physical Sciences
Physics
Physics Atomic Molecular and Chemical
Silicon
University: University of Mumbai
Completed Date: 1975
Abstract: newline No
Pagination: x, 277p
URI: http://hdl.handle.net/10603/552583
Appears in Departments:Department of Physics

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01_title.pdfAttached File90.13 kBAdobe PDFView/Open
02_prelim pages.pdf438.2 kBAdobe PDFView/Open
03_contents.pdf248.99 kBAdobe PDFView/Open
04_chapter 1.pdf1.89 MBAdobe PDFView/Open
05_chapter 2.pdf1.34 MBAdobe PDFView/Open
06_chapter 3.pdf2.38 MBAdobe PDFView/Open
07_chapter 4.pdf1.77 MBAdobe PDFView/Open
08_chapter 5.pdf656.1 kBAdobe PDFView/Open
09_chapter 6.pdf5.22 MBAdobe PDFView/Open
10_chapter 7.pdf569.31 kBAdobe PDFView/Open
11_annexures.pdf102.3 kBAdobe PDFView/Open
80_recommendation.pdf657.53 kBAdobe PDFView/Open
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