Modeling simulation and characterization of dual material gate GaN based high electron mobility transistors for high frequency applications

Abstract

The world of CMOS technology in semiconductor industries is achieving significant advancement in the recent years and rapidly changing with the introduction of novel devices such as, High Electron Mobility Transistors (HEMTs), carbon nanotube FET, new channel materials (e.g., strained silicon, pure germanium), molecular transistors to overcome the challenge of Short Channel Effect (SCE) and higher performance. Among all these novel structures, the High Electron Mobility Transistors based on III V compound semiconductor are promising choice for channel material of future post-Si CMOS Logic transistor. The GaN-based HEMT can be a potential candidate in future nanoscale device for high frequency and high power switching transistor technology solution for current area device. AlGaN/GaN heterostructure based high electron mobility transistors (HEMTs) exhibit several outstanding and unique advantages such as high electron mobility, high saturation drain current, low switch on-resistance and large off-state breakdown voltage. Hence, these devices become a prime candidate for high power, high frequency and high temperature electronic applications. Although the performance of the device is excellent for high power application in microwave/RF systems, the behavior of these devices are limited due to the continuous downscaling of the devices causes several effects. These effects are responsible for the device breakdown, poor carrier transport and performance degradation of the AlGaN/GaN HEMT. For further optimization and to improve the characteristics and power performance of the device, it is necessary to analyze these effects using device simulations. newline