Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/550812
Title: | Fabrication and characterization of metal oxide resistive random access memory devices for data storage and artificial synapse |
Researcher: | Vishwakarma, Kavita |
Guide(s): | Datta, Arnab |
Keywords: | Computer Science Computer Science Hardware and Architecture Engineering and Technology |
University: | Indian Institute of Technology Roorkee |
Completed Date: | 2022 |
Abstract: | Avaiable |
Pagination: | xv, 130 p. |
URI: | http://hdl.handle.net/10603/550812 |
Appears in Departments: | Electronics and Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 70.28 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 1.88 MB | Adobe PDF | View/Open | |
03_abstract.pdf | 316.05 kB | Adobe PDF | View/Open | |
04_chapters 1-7.pdf | 6.23 MB | Adobe PDF | View/Open | |
05_annexures.pdf | 5.08 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 603.1 kB | Adobe PDF | View/Open |
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