Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/550812
Title: Fabrication and characterization of metal oxide resistive random access memory devices for data storage and artificial synapse
Researcher: Vishwakarma, Kavita
Guide(s): Datta, Arnab
Keywords: Computer Science
Computer Science Hardware and Architecture
Engineering and Technology
University: Indian Institute of Technology Roorkee
Completed Date: 2022
Abstract: Avaiable
Pagination: xv, 130 p.
URI: http://hdl.handle.net/10603/550812
Appears in Departments:Electronics and Communication Engineering

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01_title.pdfAttached File70.28 kBAdobe PDFView/Open
02_prelim pages.pdf1.88 MBAdobe PDFView/Open
03_abstract.pdf316.05 kBAdobe PDFView/Open
04_chapters 1-7.pdf6.23 MBAdobe PDFView/Open
05_annexures.pdf5.08 MBAdobe PDFView/Open
80_recommendation.pdf603.1 kBAdobe PDFView/Open
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