Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/544424
Full metadata record
DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2024-02-08T11:15:55Z-
dc.date.available2024-02-08T11:15:55Z-
dc.identifier.urihttp://hdl.handle.net/10603/544424-
dc.description.abstractThis thesis investigates the practical applications of low-voltage organic field-effect transistors (OFETs) in logic circuits and as sensors for early pathogenic infection detection in crops. Moreover, an in situ probing technique has been established to gain a deeper understanding of the complex interface at the boundary of the electrolytes and organic semiconductors. A 10-fold enhancement in the field-effect mobility of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) OFETs from 0.01 cm2 Vand#8722;1 sand#8722;1 to 0.1 cm2 Vand#8722;1 sand#8722;1 by surface treatment of the SiO2 gate dielectric has been attributed to a reduction in trap-DOS and contact resistance through quantitative analytical methods. Despite this improvement, the operating voltage remains high (~15 V). To address this, we introduce a low-temperature solution-processed ZrO2 gate dielectric, enabling operation at lt1 V with an impressive mobility of up to 0.17 cm2 Vand#8722;1 sand#8722;1. Alternatively, imidazolium ionic liquids (IL) as gate dielectric yield OFETs with high hole mobility (~20.2 cm2 Vand#8722;1 sand#8722;1), low threshold voltage (~0.6 V), and high transconductance (gt1 mS). The effective gate bias voltage in the IL-gated OFETs was measured in situ to gain an insight into the formation of the electric double layer at the IL/semiconductor interface. Moreover, the trap-DOS at the IL/semiconductor interface has been calculated and correlated with the performance of the IL-gated OFETs. The high transconductance of IL-gated OFETs has been exploited for the fabrication of IL-gated logic inverters, which exhibit high gain (~10 V/V), near-ideal switching voltage (0.5 V - 0.7 V), and an excellent noise margin (gt55%). Concurrently, ZrO2-gated PBTTT-C14 OFETs serve as a low-power sensing platform for detecting volatile organic compounds during host-pathogen interactions in infected rice plants. this thesis advances the understanding of low-voltage OFET operating mechanisms and charts new avenues for the widespread adoption of organic semiconductor-based devices.
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleLow Voltage Organic Field Effect Transistors for Digital Logic Operations and Sensors
dc.title.alternative
dc.creator.researcherYadav, Yogesh
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.description.note
dc.contributor.guideSingh, Samarendra P and Ghosh, Sajal K
dc.publisher.placeGreater Noida
dc.publisher.universityShiv Nadar University
dc.publisher.institutionDepartment of Physics
dc.date.registered2017
dc.date.completed2023
dc.date.awarded2023
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File41.85 kBAdobe PDFView/Open
02_prelim pages.pdf222.87 kBAdobe PDFView/Open
03_content.pdf42.25 kBAdobe PDFView/Open
04_abstract.pdf371.01 kBAdobe PDFView/Open
05_chapter 1.pdf4.98 MBAdobe PDFView/Open
06_chapter 2.pdf2.88 MBAdobe PDFView/Open
07_chapter 3.pdf1.14 MBAdobe PDFView/Open
08_chapter 4.pdf2.16 MBAdobe PDFView/Open
09_chapter 5.pdf2.23 MBAdobe PDFView/Open
10_chapter 6.pdf59.95 kBAdobe PDFView/Open
11_annexures.pdf152.96 kBAdobe PDFView/Open
80_recommendation.pdf124.32 kBAdobe PDFView/Open


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: