Modeling and Simulation of Reverse T Shaped Channel Tunnel FET for RF and Sensing Applications

Abstract

This study introduces an innovative device configuration known as the reverse newlineT-shaped channel double gate TFET (RT-DG-TFET). This structure resembles the traditional TFET doping but it has a reveres T-shaped channel. It demonstrates exceptional performance metrics, including a substantial on/off-state current ratio, minimal subthreshold swing, and a low threshold voltage, this device has positioned itself as a promising candidate for the upcoming generation of sensing devices. At the same time, these performance metrics are contingent upon factors such as device dimensions, underlying physics, and the shape of channels employed. Due to the reverse T-shaped channel, the tunneling of electrons from source to channel is easier. The scaling of TFET is becoming increasingly diffi- newlinecult due to this a wide variety of TFETs have been introduced by researchers to newlinedecrease the scaling effects. newlineAfter designing the proposed device the device is investigated for high-frequency newlineand linear applications. The device shows a better performance than the other newlineexisting devices. It shows a high amount of V IP2, V IP3, and, IIP3, which leads newlineto the device being desirable for higher linearity. Additionally, it shows a lower newlinevalue of IM D3. The proposed TFET linearity and RF applications were also newlineinvestigated by placing an L-shaped pocket doping across the source and channel newlineregions. It is also suitable for high-frequency and linear applications. newlineBy using the proposed device two types of sensing devices are designed. The newlinefirst one is a biosensor and the sensing capability of the biosensor is increased by newlineplacing two cavities in the design. The sensitivity of the proposed device is very newlinehigh. Another sensing device is a photosensor, it is designed by introducing an newlineillumination window in the device. The illumination window is near the gate to newlinegenerate the Electron Hole Pairs. The spectral sensitivity (Sn) is high. It states newlinethat the proposed device is suitable for photosensor applications newline