Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/54413
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dc.coverage.spatialPhysicsen_US
dc.date.accessioned2015-10-20T09:17:22Z-
dc.date.available2015-10-20T09:17:22Z-
dc.date.issued2015-10-20-
dc.identifier.urihttp://hdl.handle.net/10603/54413-
dc.description.abstractCrystal growth is a vital and fundamental part of material science and engineering because crystals of suitable size and perfection are required for fundamental data acquisition and for practical devices such as detectors integrated circuits and for other millions and millions of applications Behind every new solid state device there stands a single crystal The ever increasing application of semiconductor based electronics creates an enormous demand for high quality semiconducting ferroelectric piezoelectric oxide single crystals newlineThere are two principal reasons for the deliberate growth of single crystals because many physical properties of solids are obscured or complicated by the effects of grain boundaries and the full range of tensor relationships between applied physical cause and observed effect can be obtained only if the full internal symmetry of the crystal structure is maintained through the specimen Ferroelectric materials pervaded a broad range of industrial and domestic applications as a result of their large electro optic and nonlinear optical coefficients and are of fundamental interest due to their polarization hysteresis photo refraction piezoelectricity and pyro electric properties This range of electrical and optical phenomena has been exploited in a number of technological applications which include electro optic scanners and lenses integrated optics piezoelectric transducers pyro electric detectors ferroelectric memories surface acoustic wave devices and quasi phase matched crystals for nonlinear frequency conversionen_US
dc.format.extenten_US
dc.languageEnglishen_US
dc.relationen_US
dc.rightsuniversityen_US
dc.titleGrowth and Characterization of Some Doped TGS Crystalsen_US
dc.title.alternativeen_US
dc.creator.researcherDEEPTHI P Ren_US
dc.subject.keywordDoped TGS Crystalsen_US
dc.subject.keywordCharacterizationen_US
dc.description.noteen_US
dc.contributor.guideShanthi Jen_US
dc.publisher.placeCoimbatoreen_US
dc.publisher.universityAvinashilingam Deemed University For Womenen_US
dc.publisher.institutionDepartment of Physicsen_US
dc.date.registered04/12/2009en_US
dc.date.completed25/09/2015en_US
dc.date.awarded25/09/2015en_US
dc.format.dimensions210 x 297 mmen_US
dc.format.accompanyingmaterialDVDen_US
dc.source.universityUniversityen_US
dc.type.degreePh.D.en_US
Appears in Departments:Department of Physics

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prdeepthi_reference.pdf345.29 kBAdobe PDFView/Open


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