Study of the TiO2 polymer nanocomposites for the fabrication of memory devices

Abstract

In the present work, Graphene oxide (GO), Reduced graphene oxide (rGO), Titanium dioxide (TiO2) nanoparticles (NPs) and their nanocomposites (NCs) have been synthesized with the Polyvinyl alcohol (PVA) by a simple and economically viable method. All the PNCs have been prepared by the ex-situ technique and characterized by using X-Ray Diffraction (XRD) spectroscopy and Field emission scanning electron microscopy (FESEM). XRD results have confirmed the successful synthesis of GO, rGO, TiO2 NPs and their composites with polymer PVA. Fourier Transform Infrared Spectroscopy (FTIR) results have confirmed the successful synthesis of GO and TiO2 NPs. The spherical morphology of the TiO2 NPs was observed from the High resolution transmission electron microscopy (HRTEM) image. The present work provides fascinating properties of GO, rGO and TiO2 PNCs, which opens up new directions for further research. In the application part, the data storage properties of these PNCs have been studied. For this, the current-voltage (I-V) measurements have been carried out. To confirm the switching behavior of the devices, the write-read-erase-read (WRER) cycles have been performed. Endurance characteristics have also been studied for their practical application. The memory performances of the GO-PVA and rGO-PVA PNCs have been studied. The GO-PVA devices have shown good endurance characteristics. The devices based on rGO-PVA PNCs have shown a high ON/OFF current ratio (ION/IOFF). Also, with the increase in the concentration of rGO nanosheets in the PVA matrix, the ION/IOFF has increased. After studying the memory characteristics of GO-PVA and rGO-PVA devices, TiO2-PVA devices have been studied for the memory device application. In the case of TiO2-PVA devices, addition of TiO2 NPs in the PVA matrix has resulted the ION/IOFF to increase. The memory performance of TiO2-PVA (1:10) device has found to be the best with the highest data storage in TiO2-PVA (1:10) device. newline