first principles studies of transiyion metal chalcogenides and oxide heterostructures for spintronic applications

Abstract

Spintronics focuses on active control and manipulation of the spin degree of free- newlinedom of electrons to get beyond the limitations of the semiconductor-based electronic industry. New device concepts that use an electric and#64257;eld or spin-polarized current result in quick and energy-efand#64257;cient magnetic switching, in contrast to magnetic and#64257;eld-driven magnetic switching. In spintronic devices, spin polarization is controlled either by mag-netic layers or via spin-orbit coupling (SOC). The era of spintronics began with the dis- covery of giant magnetoresistance (GMR). Certain spintronics-based technologies, such as spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), have been put into use on a commercial scale. The efand#64257;cient use of these spintronic devices, however, still has certain challenges to overcome. Therefore, it is imperative to discover and design innovative materials featuring outstanding and distinctive spin-based mech- anisms. 2D magnetic materials in transition metal chalcogenides (TMC) provide unique newlinephysical paradigms and encourage the development of cutting-edge spintronic devices. The features of 2D TMC span a broad range, including topological phases, semimet- newlineals, half-metals, and Mott insulators, to mention a few. Beyond ferromagnetism, there newlineare other magnetic states such as antiferromagnets, and quantum spin liquids. Similarly, atomically tailored oxide heterostructures create a powerful platform offering whole new opportunities for electronics and spintronics. They manifest phenomena encompassing the Rashba physics, magnetic ordering, and enhancement of SOC among others owing to the reconstruction of the spin, orbital, lattice, and charge states at the interfaces. It is possible to create oxide-based magnetic tunnel junctions (MTJ), and interface-based magnetoelectric spintronic devices using multiferroic oxides. Additionally, spin-orbit-based mechanisms in oxide heterostructures provide a new spintronics dimension out of which the Rashba physics emerges as a strong candidate.