Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/532303
Title: Oxygen and nitrogen ion implantation studies in silicon
Researcher: Bhatt, Geeta
Guide(s): Yadav, A D
Keywords: Collision Cascade
Physical Sciences
Physics
Physics Atomic Molecular and Chemical
Rapid Thermal Annealing
Spin Concentration
Sputtering
Vacuum System
University: University of Mumbai
Completed Date: 2005
Abstract: newline No
Pagination: xv, 170p
URI: http://hdl.handle.net/10603/532303
Appears in Departments:Department of Physics

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01_title.pdfAttached File333.06 kBAdobe PDFView/Open
02_prelim pages.pdf3.02 MBAdobe PDFView/Open
03_contents.pdf919.17 kBAdobe PDFView/Open
04_chapter 1.pdf4.44 MBAdobe PDFView/Open
05_chapter 2.pdf12.19 MBAdobe PDFView/Open
06_chapter 3.pdf5.16 MBAdobe PDFView/Open
07_chapter 4.pdf12.44 MBAdobe PDFView/Open
08_chapter 5.pdf9.33 MBAdobe PDFView/Open
09_chapter 6.pdf1.32 MBAdobe PDFView/Open
10_annexures.pdf160.38 kBAdobe PDFView/Open
80_recommendation.pdf1.65 MBAdobe PDFView/Open
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