WO3 based Photodetectors for Optoelectronic Device Applications

Abstract

In photodetector technology, the bottleneck is identified as the challenges in the development of novel materials capable of detecting low-intensity electromagnetic radiation and also compatibility with the integrated circuit (IC) fabrication. Among various metal oxide semiconductors, transitional metal oxide (TMOs) based materials are more suitable for ultra-violet (UV) photodetectors applications due to their wide bandgap, thermal stability, and chemical stability. In particular, tungsten trioxide (WO3) has been proven to be the most suitable candidate for photonic applications including electrochromic, photochromic, and gas sensor devices.