1. Shodhganga@INFLIBNET
  2. University of Mumbai
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/527286
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-11-23T11:53:17Z-
dc.date.available2023-11-23T11:53:17Z-
dc.identifier.urihttp://hdl.handle.net/10603/527286-
dc.description.abstractnewline No
dc.format.extent121p
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleIR and XRD studies on high energy ion implantation of 120Sn and 28Si IN GaAs
dc.title.alternative
dc.creator.researcherBhambhani, Uma A
dc.subject.keywordInjector System
dc.subject.keywordIon Implantation
dc.subject.keywordMeasurement Techniques
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Atomic Molecular and Chemical
dc.subject.keywordSemiconductors
dc.subject.keywordTrajectories
dc.description.note
dc.contributor.guideNarsale, A M
dc.publisher.placeMumbai
dc.publisher.universityUniversity of Mumbai
dc.publisher.institutionDepartment of Physics
dc.date.registered
dc.date.completed1997
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

Files in This Item:
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01_title.pdfAttached File147.35 kBAdobe PDFView/Open
02_prelim pages.pdf838.41 kBAdobe PDFView/Open
03_contents.pdf388.87 kBAdobe PDFView/Open
04_chapter 1.pdf1.75 MBAdobe PDFView/Open
05_chapter 2.pdf4.43 MBAdobe PDFView/Open
06_chapter 3.pdf2.15 MBAdobe PDFView/Open
07_chapter 4.pdf5.68 MBAdobe PDFView/Open
08_chapter 5.pdf849.24 kBAdobe PDFView/Open
09_annexures.pdf319.54 kBAdobe PDFView/Open
80_recommendation.pdf996.17 kBAdobe PDFView/Open
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