Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/527286
Title: IR and XRD studies on high energy ion implantation of 120Sn and 28Si IN GaAs
Researcher: Bhambhani, Uma A
Guide(s): Narsale, A M
Keywords: Injector System
Ion Implantation
Measurement Techniques
Physical Sciences
Physics
Physics Atomic Molecular and Chemical
Semiconductors
Trajectories
University: University of Mumbai
Completed Date: 1997
Abstract: newline No
Pagination: 121p
URI: http://hdl.handle.net/10603/527286
Appears in Departments:Department of Physics

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01_title.pdfAttached File147.35 kBAdobe PDFView/Open
02_prelim pages.pdf838.41 kBAdobe PDFView/Open
03_contents.pdf388.87 kBAdobe PDFView/Open
04_chapter 1.pdf1.75 MBAdobe PDFView/Open
05_chapter 2.pdf4.43 MBAdobe PDFView/Open
06_chapter 3.pdf2.15 MBAdobe PDFView/Open
07_chapter 4.pdf5.68 MBAdobe PDFView/Open
08_chapter 5.pdf849.24 kBAdobe PDFView/Open
09_annexures.pdf319.54 kBAdobe PDFView/Open
80_recommendation.pdf996.17 kBAdobe PDFView/Open
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