Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/527286
Title: | IR and XRD studies on high energy ion implantation of 120Sn and 28Si IN GaAs |
Researcher: | Bhambhani, Uma A |
Guide(s): | Narsale, A M |
Keywords: | Injector System Ion Implantation Measurement Techniques Physical Sciences Physics Physics Atomic Molecular and Chemical Semiconductors Trajectories |
University: | University of Mumbai |
Completed Date: | 1997 |
Abstract: | newline No |
Pagination: | 121p |
URI: | http://hdl.handle.net/10603/527286 |
Appears in Departments: | Department of Physics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 147.35 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 838.41 kB | Adobe PDF | View/Open | |
03_contents.pdf | 388.87 kB | Adobe PDF | View/Open | |
04_chapter 1.pdf | 1.75 MB | Adobe PDF | View/Open | |
05_chapter 2.pdf | 4.43 MB | Adobe PDF | View/Open | |
06_chapter 3.pdf | 2.15 MB | Adobe PDF | View/Open | |
07_chapter 4.pdf | 5.68 MB | Adobe PDF | View/Open | |
08_chapter 5.pdf | 849.24 kB | Adobe PDF | View/Open | |
09_annexures.pdf | 319.54 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 996.17 kB | Adobe PDF | View/Open |
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