Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/527183
Title: | Electrical characteristics of high energy 120Sn implantation in GaAs |
Researcher: | Yousuf Pyar Ali Hassan |
Guide(s): | Narsale, A M |
Keywords: | Amorphousness Ion Implantation Pelletron Accelerator Physical Sciences Physics Physics Particles and Fields Semiconductor Devices Vaccum System |
University: | University of Mumbai |
Completed Date: | 1997 |
Abstract: | newline No |
Pagination: | 155p |
URI: | http://hdl.handle.net/10603/527183 |
Appears in Departments: | Department of Physics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 295.18 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 2.57 MB | Adobe PDF | View/Open | |
03_contents.pdf | 962.15 kB | Adobe PDF | View/Open | |
04_chapter 1.pdf | 4.14 MB | Adobe PDF | View/Open | |
05_chapter 2.pdf | 6.76 MB | Adobe PDF | View/Open | |
06_chapter 3.pdf | 14.03 MB | Adobe PDF | View/Open | |
07_chapter 4.pdf | 10.52 MB | Adobe PDF | View/Open | |
08_chapter 5.pdf | 18.29 MB | Adobe PDF | View/Open | |
09_chapter 6.pdf | 2.13 MB | Adobe PDF | View/Open | |
10_annexures.pdf | 1.31 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 2.43 MB | Adobe PDF | View/Open |
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