Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/527183
Title: Electrical characteristics of high energy 120Sn implantation in GaAs
Researcher: Yousuf Pyar Ali Hassan
Guide(s): Narsale, A M
Keywords: Amorphousness
Ion Implantation
Pelletron Accelerator
Physical Sciences
Physics
Physics Particles and Fields
Semiconductor Devices
Vaccum System
University: University of Mumbai
Completed Date: 1997
Abstract: newline No
Pagination: 155p
URI: http://hdl.handle.net/10603/527183
Appears in Departments:Department of Physics

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01_title.pdfAttached File295.18 kBAdobe PDFView/Open
02_prelim pages.pdf2.57 MBAdobe PDFView/Open
03_contents.pdf962.15 kBAdobe PDFView/Open
04_chapter 1.pdf4.14 MBAdobe PDFView/Open
05_chapter 2.pdf6.76 MBAdobe PDFView/Open
06_chapter 3.pdf14.03 MBAdobe PDFView/Open
07_chapter 4.pdf10.52 MBAdobe PDFView/Open
08_chapter 5.pdf18.29 MBAdobe PDFView/Open
09_chapter 6.pdf2.13 MBAdobe PDFView/Open
10_annexures.pdf1.31 MBAdobe PDFView/Open
80_recommendation.pdf2.43 MBAdobe PDFView/Open
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