Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/524679
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dc.coverage.spatialDepartment of Physics
dc.date.accessioned2023-11-10T07:09:40Z-
dc.date.available2023-11-10T07:09:40Z-
dc.identifier.urihttp://hdl.handle.net/10603/524679-
dc.description.abstractAbstract attached newline newline
dc.format.extentNA
dc.languageEnglish
dc.relationNA
dc.rightsuniversity
dc.titleStructural and electronic properties of undoped and si doped gan films and mg doped gan nanorods grown epitaxially by reactive sputtering
dc.title.alternativeNa
dc.creator.researcherMonish, Mohammad
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Multidisciplinary
dc.description.noteNA
dc.contributor.guideMajor, S.S
dc.publisher.placeMumbai
dc.publisher.universityIndian Institute of Technology Bombay
dc.publisher.institutionDepartment of Physics
dc.date.registered2017
dc.date.completed2023
dc.date.awarded2023
dc.format.dimensionsNA
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

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01_title.pdfAttached File22.96 kBAdobe PDFView/Open
02_prelimpages.pdf557.37 kBAdobe PDFView/Open
03_abstract.pdf102.6 kBAdobe PDFView/Open
04_contents.pdf252.81 kBAdobe PDFView/Open
05_chapter_1.pdf104.38 kBAdobe PDFView/Open
06_chapter_2.pdf368.05 kBAdobe PDFView/Open
07_chapter_3.pdf391.69 kBAdobe PDFView/Open
08_chapter_4.pdf1.61 MBAdobe PDFView/Open
09_chapter_5.pdf390.49 kBAdobe PDFView/Open
10_chapter_6.pdf1.35 MBAdobe PDFView/Open
11_chapter_7.pdf1.28 MBAdobe PDFView/Open
12_chapter_8.pdf2.46 MBAdobe PDFView/Open
13_annexure.pdf403.56 kBAdobe PDFView/Open
80_recommendation.pdf141.88 kBAdobe PDFView/Open


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