Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/524679
Title: Structural and electronic properties of undoped and si doped gan films and mg doped gan nanorods grown epitaxially by reactive sputtering
Researcher: Monish, Mohammad
Guide(s): Major, S.S
Keywords: Physical Sciences
Physics
Physics Multidisciplinary
University: Indian Institute of Technology Bombay
Completed Date: 2023
Abstract: Abstract attached newline newline
Pagination: NA
URI: http://hdl.handle.net/10603/524679
Appears in Departments:Department of Physics

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01_title.pdfAttached File22.96 kBAdobe PDFView/Open
02_prelimpages.pdf557.37 kBAdobe PDFView/Open
03_abstract.pdf102.6 kBAdobe PDFView/Open
04_contents.pdf252.81 kBAdobe PDFView/Open
05_chapter_1.pdf104.38 kBAdobe PDFView/Open
06_chapter_2.pdf368.05 kBAdobe PDFView/Open
07_chapter_3.pdf391.69 kBAdobe PDFView/Open
08_chapter_4.pdf1.61 MBAdobe PDFView/Open
09_chapter_5.pdf390.49 kBAdobe PDFView/Open
10_chapter_6.pdf1.35 MBAdobe PDFView/Open
11_chapter_7.pdf1.28 MBAdobe PDFView/Open
12_chapter_8.pdf2.46 MBAdobe PDFView/Open
13_annexure.pdf403.56 kBAdobe PDFView/Open
80_recommendation.pdf141.88 kBAdobe PDFView/Open
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