Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/523912
Title: | Oxide nitride passivated high performance algan gan high electron mobility transistors |
Researcher: | Bhardwaj, Navneet |
Guide(s): | Saha, Dipankar |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | Indian Institute of Technology Bombay |
Completed Date: | 2023 |
Abstract: | Abstract attached newline newline |
Pagination: | NA |
URI: | http://hdl.handle.net/10603/523912 |
Appears in Departments: | Department of Electrical Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 118.9 kB | Adobe PDF | View/Open |
02_prelimpages.pdf | 1.02 MB | Adobe PDF | View/Open | |
03_abstract.pdf | 84.58 kB | Adobe PDF | View/Open | |
04_contents.pdf | 188.18 kB | Adobe PDF | View/Open | |
05_chapter_1.pdf | 423.75 kB | Adobe PDF | View/Open | |
06_chapter_2.pdf | 1.74 MB | Adobe PDF | View/Open | |
07_chapter_3.pdf | 3.2 MB | Adobe PDF | View/Open | |
08_chapter_4.pdf | 1.47 MB | Adobe PDF | View/Open | |
09_chapter_5.pdf | 2.26 MB | Adobe PDF | View/Open | |
10_chapter_6.pdf | 1.8 MB | Adobe PDF | View/Open | |
11_annexure.pdf | 132.85 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 81.59 kB | Adobe PDF | View/Open |
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