Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/523912
Title: Oxide nitride passivated high performance algan gan high electron mobility transistors
Researcher: Bhardwaj, Navneet
Guide(s): Saha, Dipankar
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Bombay
Completed Date: 2023
Abstract: Abstract attached newline newline
Pagination: NA
URI: http://hdl.handle.net/10603/523912
Appears in Departments:Department of Electrical Engineering

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01_title.pdfAttached File118.9 kBAdobe PDFView/Open
02_prelimpages.pdf1.02 MBAdobe PDFView/Open
03_abstract.pdf84.58 kBAdobe PDFView/Open
04_contents.pdf188.18 kBAdobe PDFView/Open
05_chapter_1.pdf423.75 kBAdobe PDFView/Open
06_chapter_2.pdf1.74 MBAdobe PDFView/Open
07_chapter_3.pdf3.2 MBAdobe PDFView/Open
08_chapter_4.pdf1.47 MBAdobe PDFView/Open
09_chapter_5.pdf2.26 MBAdobe PDFView/Open
10_chapter_6.pdf1.8 MBAdobe PDFView/Open
11_annexure.pdf132.85 kBAdobe PDFView/Open
80_recommendation.pdf81.59 kBAdobe PDFView/Open
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