Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/519377
Title: Smart Embedded Subsystem Development For Critical Task Management Functions
Researcher: VISWANATHAN K
Guide(s): Ravi T
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Sathyabama Institute of Science and Technology
Completed Date: 2022
Abstract: The development of TiO2 thin films and the mechanical newlinecharacteristics of sensor materials are intended to improve the newlineperformance of gas detecting components. The substrates are sensordesigned newlineTiO2-coated TiO2 substrates. The steps for measuring the gasinduced newlineconductance changes in TiO2 films include contact with newlineammonia and hydrogen. For gas sensing applications, thin films of Nano newlinecoated using an RF Magnetron Sputtering (RFPVD) Unit were used. The newlinezeolite synthesis aided the CVD method synthesis of MWCNTs and their newlineintegration into the PVC matrix to generate the PVC/MWCNTs newlinenanocomposite. The structure and geometry of the MWCNTs have been newlinecomprehensively studied, as have electrical/mechanical tensile tests and newlineelectrical resistivity experiments under dynamic stress. On the TiO2 film, newlineCarbon Nano Tube (CNT) rinse coating procedures are applied. Metal newlineoxide semiconductor sensors have current resistance and electrical newlinecharacteristics. The different qualities determine the thin sheet where the newlinegas molecules are detected. These approaches are a novel form of gas newlinesensor that takes advantage of a TiO2 and CNT combination. newlineThe advantages of using nano-materials in gas sensors are high newlinesensitivity, durability, and low temperature. As a strain sensor, carbon newlinenanotubes coated with polymer composite are used. MWCNTs were newlinesynthesized using zeolite-supported chemical vapour deposition (CVD) newlineand mixed with polyvinyl chloride (PVC). RFPVD is used to deposit a newlinethin layer of zinc oxide (ZnO) on silicon (Si) at ambient temperature. newlineDuring the Radio Frequency (RF) power, argon/oxygen gas pressure at newlinevarious Standard Cubic Centimeters per Minute, the sample holder newlineix newlinetemperature was adjusted and raised for crystal structure (SCCM). newlineFabrication device structures include experimental surface morphology, newlinefilm structure, and design approach. In gas sensors, oxide and newlinesemiconductor materials are utilised. The varied characteristics and newlineperformance of ZnO thin films were examined utilizing the RF sputtering newlineprocess. In general
Pagination: vi, 114
URI: http://hdl.handle.net/10603/519377
Appears in Departments:ELECTRONICS DEPARTMENT

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10.chapter 6.pdfAttached File937.17 kBAdobe PDFView/Open
11.chapter 7.pdf159.86 kBAdobe PDFView/Open
12.annexure.pdf3.53 MBAdobe PDFView/Open
1.title.pdf91.42 kBAdobe PDFView/Open
2.prelim pages.pdf296.47 kBAdobe PDFView/Open
3.abstract.pdf14.01 kBAdobe PDFView/Open
4.contents.pdf106.89 kBAdobe PDFView/Open
5.chapter 1.pdf235.14 kBAdobe PDFView/Open
6.chapter 2.pdf151.18 kBAdobe PDFView/Open
7.chapter 3.pdf171.74 kBAdobe PDFView/Open
80_recommendation.pdf91.42 kBAdobe PDFView/Open
8.chapter 4.pdf540.07 kBAdobe PDFView/Open
9.chapter 5.pdf598.14 kBAdobe PDFView/Open
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