Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/519120
Title: Design and development of pc based I v measurement system and electrical characterization of high energy 120sn implantation in gaas
Researcher: Sukhatankar, Kishor V
Guide(s): Narsale, A M
Keywords: Amorphousness
Dislocations
Electronic Energy
Ion-Solid Interaction
Lattice Defects
Physical Sciences
Physics
Physics Applied
University: University of Mumbai
Completed Date: 2003
Abstract: No newline newline
Pagination: viii, 152p
URI: http://hdl.handle.net/10603/519120
Appears in Departments:Department of Physics

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01_title.pdfAttached File278.64 kBAdobe PDFView/Open
02_prelim pages.pdf2.46 MBAdobe PDFView/Open
03_contents.pdf246.64 kBAdobe PDFView/Open
04_chapter 1.pdf6.31 MBAdobe PDFView/Open
05_chapter 2.pdf12.68 MBAdobe PDFView/Open
06_chapter 3.pdf4.26 MBAdobe PDFView/Open
07_chapter 4.pdf5.39 MBAdobe PDFView/Open
08_chapter 5.pdf13.37 MBAdobe PDFView/Open
09_chapter 6.pdf3.02 MBAdobe PDFView/Open
10_annexures.pdf4.74 MBAdobe PDFView/Open
80_recommendation.pdf3.3 MBAdobe PDFView/Open
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