Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/519120
Title: | Design and development of pc based I v measurement system and electrical characterization of high energy 120sn implantation in gaas |
Researcher: | Sukhatankar, Kishor V |
Guide(s): | Narsale, A M |
Keywords: | Amorphousness Dislocations Electronic Energy Ion-Solid Interaction Lattice Defects Physical Sciences Physics Physics Applied |
University: | University of Mumbai |
Completed Date: | 2003 |
Abstract: | No newline newline |
Pagination: | viii, 152p |
URI: | http://hdl.handle.net/10603/519120 |
Appears in Departments: | Department of Physics |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 278.64 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 2.46 MB | Adobe PDF | View/Open | |
03_contents.pdf | 246.64 kB | Adobe PDF | View/Open | |
04_chapter 1.pdf | 6.31 MB | Adobe PDF | View/Open | |
05_chapter 2.pdf | 12.68 MB | Adobe PDF | View/Open | |
06_chapter 3.pdf | 4.26 MB | Adobe PDF | View/Open | |
07_chapter 4.pdf | 5.39 MB | Adobe PDF | View/Open | |
08_chapter 5.pdf | 13.37 MB | Adobe PDF | View/Open | |
09_chapter 6.pdf | 3.02 MB | Adobe PDF | View/Open | |
10_annexures.pdf | 4.74 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 3.3 MB | Adobe PDF | View/Open |
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