Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/515639
Title: | Fabrication and Characterization of p Si n TiO2 Nanostructured Heterojunction Diodes for Electronic and Optoelectronic Applications |
Researcher: | Rawat, Gopal |
Guide(s): | Jit, S. |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | Indian Institute of Technology IIT (BHU), Varanasi |
Completed Date: | 2018 |
Abstract: | Abstract is not available newline |
Pagination: | |
URI: | http://hdl.handle.net/10603/515639 |
Appears in Departments: | Electronics Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title page.pdf | Attached File | 605.63 kB | Adobe PDF | View/Open |
02_preliminary pages.pdf | 1.66 MB | Adobe PDF | View/Open | |
03_contents.pdf | 134.24 kB | Adobe PDF | View/Open | |
04_chapter 01.pdf | 1.3 MB | Adobe PDF | View/Open | |
05_chapter 02.pdf | 3.02 MB | Adobe PDF | View/Open | |
06_chapter 03.pdf | 1.69 MB | Adobe PDF | View/Open | |
07_chapter 04.pdf | 3.59 MB | Adobe PDF | View/Open | |
08_chapter 05.pdf | 515.1 kB | Adobe PDF | View/Open | |
09_annexure.pdf | 248.61 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 1.11 MB | Adobe PDF | View/Open |
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