1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology IIT (BHU), Varanasi
  3. Electronics Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/515639
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-10-03T10:29:57Z-
dc.date.available2023-10-03T10:29:57Z-
dc.identifier.urihttp://hdl.handle.net/10603/515639-
dc.description.abstractAbstract is not available newline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleFabrication and Characterization of p Si n TiO2 Nanostructured Heterojunction Diodes for Electronic and Optoelectronic Applications
dc.title.alternative
dc.creator.researcherRawat, Gopal
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.note
dc.contributor.guideJit, S.
dc.publisher.placeVaranasi
dc.publisher.universityIndian Institute of Technology IIT (BHU), Varanasi
dc.publisher.institutionElectronics Engineering
dc.date.registered2013
dc.date.completed2018
dc.date.awarded2018
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Electronics Engineering

Files in This Item:
File Description SizeFormat 
01_title page.pdfAttached File605.63 kBAdobe PDFView/Open
02_preliminary pages.pdf1.66 MBAdobe PDFView/Open
03_contents.pdf134.24 kBAdobe PDFView/Open
04_chapter 01.pdf1.3 MBAdobe PDFView/Open
05_chapter 02.pdf3.02 MBAdobe PDFView/Open
06_chapter 03.pdf1.69 MBAdobe PDFView/Open
07_chapter 04.pdf3.59 MBAdobe PDFView/Open
08_chapter 05.pdf515.1 kBAdobe PDFView/Open
09_annexure.pdf248.61 kBAdobe PDFView/Open
80_recommendation.pdf1.11 MBAdobe PDFView/Open
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