Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/510035
| Title: | Electrical and IR investigations of high energy 28 Si implantation in GaAs |
| Researcher: | Damle, Arun Ramchandra |
| Guide(s): | Narsale, A M |
| Keywords: | Amorphization Annealing Technique Dose Dependence Ion Implantation Physical Sciences Physics Physics Applied Semiconductors |
| University: | University of Mumbai |
| Completed Date: | 1999 |
| Abstract: | No newline newline |
| Pagination: | 116p |
| URI: | http://hdl.handle.net/10603/510035 |
| Appears in Departments: | Department of Physics |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01_title.pdf | Attached File | 145.04 kB | Adobe PDF | View/Open |
| 02_prelim pages.pdf | 1.38 MB | Adobe PDF | View/Open | |
| 03_contents.pdf | 337.09 kB | Adobe PDF | View/Open | |
| 04_chapter 1.pdf | 1.66 MB | Adobe PDF | View/Open | |
| 05_chapter 2.pdf | 4.01 MB | Adobe PDF | View/Open | |
| 06_chapter 3.pdf | 3.72 MB | Adobe PDF | View/Open | |
| 07_chapter 4.pdf | 4.65 MB | Adobe PDF | View/Open | |
| 08_chapter 5.pdf | 1.15 MB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 1.26 MB | Adobe PDF | View/Open |
Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).
Altmetric Badge: