Design and Analysis of Channel and Gate Engineered Iii Nitride High Electron Mobility Transistors for RF Applications

Abstract

In recent years, GaN-based high electron mobility transistors (HEMTs) have emerged as excellent devices for high-power RF applications and have replaced conventional Si-based transistors in RF and power electronics industry. GaN has a wide band gap, large critical field, high mobility, and high saturation velocity, thus indicating the excellent material properties of GaN for both high power switching and RF application. The polarization-induced two-dimensional gas (2DEG) of GaN hetero-structure contributes low resistive loss due to the absence of doping. GaN-based HEMTs are widely used in high-resolution radars, broadband communication, the automotive industries, bio-sensors, military, and commercial applications. Next-generation communication systems require much wider bandwidth RF amplifiers with high power handling capability with low resistive loss. AlGaN/GaN-based HEMTs showed excellent DC and microwave performance, making them attractive alternate candidates for future RF electronics newline