Design and Analysis of Charge Plasma Induced Graded Channel Nanotube FET and its Biosensor Applications

Abstract

Classical MOSFETs are reaching their size reduction limit. The gate-all-around (GAA) newlinenanotube field-effect transistor (NTFET) is one of the most promising new structural newlinealternatives. Because of the rapid changes in doping within a nanometer-scale space, excessive newlinescaling of traditional GAA nanotube FET requires implanting abrupt junctions between the newlinesource/drain and the channel. Accordingly, eliminating the diffusion of source/drain dopants newlineinto the channel necessitates very quick dopant activation procedures and highly precise newlinedoping techniques. The charge plasma (CP) based dopingless FET has evolved as one such newlinestructure to overcome the issues of doping control. This work is dedicated to investigating the newlineeffect of charge plasma technique-based graded channel nanotube FET structures to achieve newlineenhanced performance with reduced short channel effects (SCEs) and designing a sensor newlinebased on it. newline