Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/502024
Title: Design and fabrication of algan gan transistors for heavy metal ion sensors
Researcher: Nigam, Adarsh
Guide(s): Kumar, Mahesh
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Jodhpur
Completed Date: 2020
Abstract: Available newline newline
Pagination: xx, 130p.
URI: http://hdl.handle.net/10603/502024
Appears in Departments:Department of Electrical Engineering

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01_title.pdfAttached File184.92 kBAdobe PDFView/Open
02_prelim pages.pdf1.68 MBAdobe PDFView/Open
03_table of contents.pdf334.29 kBAdobe PDFView/Open
04_abstract.pdf196.94 kBAdobe PDFView/Open
05_chapter 1.pdf2.18 MBAdobe PDFView/Open
06_chapter 2.pdf2.34 MBAdobe PDFView/Open
07_chapter 3.pdf3.06 MBAdobe PDFView/Open
08_chapter 4.pdf1.98 MBAdobe PDFView/Open
09_chapter 5.pdf2.49 MBAdobe PDFView/Open
10_chapter 6.pdf1.78 MBAdobe PDFView/Open
11_chapter 7.pdf2.78 MBAdobe PDFView/Open
12_annexure.pdf883.41 kBAdobe PDFView/Open
80_recommendation.pdf659.7 kBAdobe PDFView/Open
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