Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/501076
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DC FieldValueLanguage
dc.coverage.spatialDepartment of Electrical Engineering
dc.date.accessioned2023-07-24T05:51:02Z-
dc.date.available2023-07-24T05:51:02Z-
dc.identifier.urihttp://hdl.handle.net/10603/501076-
dc.description.abstractAvailable newline newline
dc.format.extentxiv, 80p.
dc.languageEnglish
dc.relationNA
dc.rightsuniversity
dc.titleModeling and simulation of gallium nitride high electron mobility transistors and optimization of buffer layer
dc.title.alternativeNa
dc.creator.researcherJoshi, Vipin
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.notecol. ill.; including bibliography
dc.contributor.guideTiwari, Shree Prakash
dc.publisher.placeJodhpur
dc.publisher.universityIndian Institute of Technology Jodhpur
dc.publisher.institutionDepartment of Electrical Engineering
dc.date.registered2013
dc.date.completed2018
dc.date.awarded2019
dc.format.dimensionsNA
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electrical Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File57.14 kBAdobe PDFView/Open
02_prelim pages.pdf1.43 MBAdobe PDFView/Open
03_table of contents.pdf343.69 kBAdobe PDFView/Open
04_abstract.pdf36.97 kBAdobe PDFView/Open
05_chapter 1.pdf305.24 kBAdobe PDFView/Open
06_chapter 2.pdf584.59 kBAdobe PDFView/Open
07_chapter 3.pdf1.49 MBAdobe PDFView/Open
08_chapter 4.pdf1.98 MBAdobe PDFView/Open
09_chapter 5.pdf1.74 MBAdobe PDFView/Open
10_annexure.pdf130.56 kBAdobe PDFView/Open
80_recommendation.pdf202.66 kBAdobe PDFView/Open


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