Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/501076
Title: Modeling and simulation of gallium nitride high electron mobility transistors and optimization of buffer layer
Researcher: Joshi, Vipin
Guide(s): Tiwari, Shree Prakash
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Jodhpur
Completed Date: 2018
Abstract: Available newline newline
Pagination: xiv, 80p.
URI: http://hdl.handle.net/10603/501076
Appears in Departments:Department of Electrical Engineering

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01_title.pdfAttached File57.14 kBAdobe PDFView/Open
02_prelim pages.pdf1.43 MBAdobe PDFView/Open
03_table of contents.pdf343.69 kBAdobe PDFView/Open
04_abstract.pdf36.97 kBAdobe PDFView/Open
05_chapter 1.pdf305.24 kBAdobe PDFView/Open
06_chapter 2.pdf584.59 kBAdobe PDFView/Open
07_chapter 3.pdf1.49 MBAdobe PDFView/Open
08_chapter 4.pdf1.98 MBAdobe PDFView/Open
09_chapter 5.pdf1.74 MBAdobe PDFView/Open
10_annexure.pdf130.56 kBAdobe PDFView/Open
80_recommendation.pdf202.66 kBAdobe PDFView/Open
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