Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/496500
| Title: | Growth characterizations and p n junction devices of InSb crystals grown by vertical directional solidification |
| Researcher: | Gadkari, D B |
| Guide(s): | Lal, K B |
| Keywords: | Electrical Properties Etching Methods Growth Morphology Physical Sciences Physics Physics Atomic Molecular and Chemical Solidification Substrate Preparation |
| University: | University of Mumbai |
| Completed Date: | 1997 |
| Abstract: | newline No |
| Pagination: | xiii, 87p |
| URI: | http://hdl.handle.net/10603/496500 |
| Appears in Departments: | Department of Physics |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01_title.pdf | Attached File | 189.31 kB | Adobe PDF | View/Open |
| 02_prelim pages.pdf | 2.54 MB | Adobe PDF | View/Open | |
| 03_contents.pdf | 407.81 kB | Adobe PDF | View/Open | |
| 04_chapter 1.pdf | 3.82 MB | Adobe PDF | View/Open | |
| 05_chapter 2.pdf | 13.36 MB | Adobe PDF | View/Open | |
| 06_chapter 3.pdf | 9.5 MB | Adobe PDF | View/Open | |
| 07_chapter 4.pdf | 17.35 MB | Adobe PDF | View/Open | |
| 08_chapter 5.pdf | 2 MB | Adobe PDF | View/Open | |
| 09_annexures.pdf | 7.09 MB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 2.21 MB | Adobe PDF | View/Open |
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