1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Bombay
  3. Department of Electrical Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/494887
Title: Properties of 2deg and high performance high electron mobility transistors in algan gan hetero structures
Researcher: Upadhyay, Bhanu Bhakta
Guide(s): Saha, Dipankar
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Bombay
Completed Date: 2021
Abstract: Abstract attached newline newline
Pagination: NA
URI: http://hdl.handle.net/10603/494887
Appears in Departments:Department of Electrical Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File87.61 kBAdobe PDFView/Open
02_prelimpages.pdf193.66 kBAdobe PDFView/Open
03_abstract.pdf92.21 kBAdobe PDFView/Open
04_contents.pdf234.19 kBAdobe PDFView/Open
05_chapter_1.pdf300.67 kBAdobe PDFView/Open
06_chapter_2.pdf13.45 MBAdobe PDFView/Open
07_chapter_3_compressed.pdf293.24 kBAdobe PDFView/Open
08_chapter_4.pdf6.87 MBAdobe PDFView/Open
09_chapter_5.pdf3.63 MBAdobe PDFView/Open
10_chapter_6.pdf13.96 MBAdobe PDFView/Open
11_chapter_7_compressed.pdf334.05 kBAdobe PDFView/Open
12_chapter_8.pdf7.85 MBAdobe PDFView/Open
13_appendix.pdf144.43 kBAdobe PDFView/Open
80_recommendation.pdf138.41 kBAdobe PDFView/Open
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