Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/489730
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dc.coverage.spatialDatapath elements design in 15nm finfet technology using self controllable voltage level technique
dc.date.accessioned2023-06-07T09:23:50Z-
dc.date.available2023-06-07T09:23:50Z-
dc.identifier.urihttp://hdl.handle.net/10603/489730-
dc.description.abstractThe primary focus of the work that is presented in this thesis is the design of Fin-type Field Effect Transistor (FinFET) circuits, which include newlineboth the Arithmetic and Logic Units (ALUs). The theory and vocabulary of newlineFinFET technology, as well as technology in general, are examined in depth newlinethroughout the thesis. In order to get a more in-depth understanding of the issue at hand, a variety of original concepts and applications found in the newlineresearch literature have been analysed. Discoveries have shown that there is a potential for developing and manufacturing innovative FinFET-based logic newlinedevices and applications with improved circuit characteristics such as area, newlinecircuit complexity, and clock delays. These improvements have been made newlinepossible by advances in semiconductor technology. This serves as a source of newlineinspiration for me to accomplish the responsibilities that have been entrusted newlineto me as part of this educational programme. In addition, a comprehensive analysis of FinFET circuits is provided, which serves as an overview of the available research in this field. It has been discussed how to develop logic circuits based on FinFET by using a combinational design technique to accomplish so, and this topic has been covered. In the course of newline
dc.format.extentxiii, 131p.
dc.languageEnglish
dc.relationp.119-130
dc.rightsuniversity
dc.titleDatapath elements design in 15nm finfet technology using self controllable voltage level technique
dc.title.alternative
dc.creator.researcherDuraivel A N
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering
dc.subject.keywordEngineering Electrical and Electronic
dc.subject.keywordFinFET circuits
dc.subject.keywordTransistor
dc.subject.keywordsemiconductor
dc.description.note
dc.contributor.guidePaulchamy B
dc.publisher.placeChennai
dc.publisher.universityAnna University
dc.publisher.institutionFaculty of Information and Communication Engineering
dc.date.registered
dc.date.completed2022
dc.date.awarded2022
dc.format.dimensions21 cms
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Faculty of Information and Communication Engineering

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01_title.pdfAttached File2.87 MBAdobe PDFView/Open
02_prelim.pdf1.79 MBAdobe PDFView/Open
03_content.pdf2.87 MBAdobe PDFView/Open
04_abstract.pdf2.88 MBAdobe PDFView/Open
05_chapter 1.pdf2.87 MBAdobe PDFView/Open
06_chapter 2.pdf2.87 MBAdobe PDFView/Open
07_chapter 3.pdf2.87 MBAdobe PDFView/Open
08_chapter 4.pdf2.87 MBAdobe PDFView/Open
09_chapter 5.pdf2.87 MBAdobe PDFView/Open
10_chapter 6.pdf2.87 MBAdobe PDFView/Open
11_annexures.pdf123.45 kBAdobe PDFView/Open
80_recommendation.pdf80.82 kBAdobe PDFView/Open


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