Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/488985
Title: Hall effect in silicon doped with iron
Researcher: Joshi, Suman V
Guide(s): Joshi, M C
Keywords: Electrical Circuits
Inplantor
Ion Implantation
Liquid Nitrogen Cryostat
Ohnic Contacts
Physical Sciences
Physics
Physics Applied
University: University of Mumbai
Completed Date: 1981
Abstract: newlineNo
Pagination: x, 169p
URI: http://hdl.handle.net/10603/488985
Appears in Departments:Department of Physics

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01_title.pdfAttached File120.77 kBAdobe PDFView/Open
02_prelim pages.pdf1.2 MBAdobe PDFView/Open
03_contents.pdf793.8 kBAdobe PDFView/Open
04_chapter 1.pdf7.31 MBAdobe PDFView/Open
05_chapter 2.pdf6.93 MBAdobe PDFView/Open
06_chapter 3.pdf5.42 MBAdobe PDFView/Open
07_chapter 4.pdf6.03 MBAdobe PDFView/Open
08_chapter 5.pdf8.96 MBAdobe PDFView/Open
09_chapter 6.pdf8.89 MBAdobe PDFView/Open
80_recommendation.pdf9.01 MBAdobe PDFView/Open
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