1. Shodhganga@INFLIBNET
  2. University of Mumbai
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/488985
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-06-05T09:08:35Z-
dc.date.available2023-06-05T09:08:35Z-
dc.identifier.urihttp://hdl.handle.net/10603/488985-
dc.description.abstractnewlineNo
dc.format.extentx, 169p
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleHall effect in silicon doped with iron
dc.title.alternative
dc.creator.researcherJoshi, Suman V
dc.subject.keywordElectrical Circuits
dc.subject.keywordInplantor
dc.subject.keywordIon Implantation
dc.subject.keywordLiquid Nitrogen Cryostat
dc.subject.keywordOhnic Contacts
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.description.note
dc.contributor.guideJoshi, M C
dc.publisher.placeMumbai
dc.publisher.universityUniversity of Mumbai
dc.publisher.institutionDepartment of Physics
dc.date.registered
dc.date.completed1981
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File120.77 kBAdobe PDFView/Open
02_prelim pages.pdf1.2 MBAdobe PDFView/Open
03_contents.pdf793.8 kBAdobe PDFView/Open
04_chapter 1.pdf7.31 MBAdobe PDFView/Open
05_chapter 2.pdf6.93 MBAdobe PDFView/Open
06_chapter 3.pdf5.42 MBAdobe PDFView/Open
07_chapter 4.pdf6.03 MBAdobe PDFView/Open
08_chapter 5.pdf8.96 MBAdobe PDFView/Open
09_chapter 6.pdf8.89 MBAdobe PDFView/Open
80_recommendation.pdf9.01 MBAdobe PDFView/Open
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