1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Bombay
  3. Department of Electrical Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/486260
Title: Performance improvement of AlGan GaN based high electron mobility transistors
Researcher: Yahya, Meer Mudassar Imam
Guide(s): Saha, Dipankar
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Bombay
Completed Date: 2019
Abstract: Abstract attached newline newline
Pagination: NA
URI: http://hdl.handle.net/10603/486260
Appears in Departments:Department of Electrical Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File49.67 kBAdobe PDFView/Open
02_prelimpages.pdf193.94 kBAdobe PDFView/Open
03_abstract.pdf169.97 kBAdobe PDFView/Open
04_contents.pdf131.83 kBAdobe PDFView/Open
05_chapter_1.pdf290.3 kBAdobe PDFView/Open
06_chapter_2.pdf811.63 kBAdobe PDFView/Open
07_chapter_3.pdf427.34 kBAdobe PDFView/Open
08_chapter_4.pdf404.3 kBAdobe PDFView/Open
09_chapter_5.pdf1.85 MBAdobe PDFView/Open
10_annexure.pdf165.65 kBAdobe PDFView/Open
80_recommendation.pdf137.57 kBAdobe PDFView/Open
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